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1. product pro?le 1.1 general description standard level n-channel enhancement mode ?eld effect transistor in a plastic package using trenchmos? technology. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information PH20100S n-channel trenchmos? standard level fet rev. 02 17 august 2004 product data sheet n low thermal resistance n so8 equivalent area footprint n low gate drive current n low on-state resistance. n dc-to-dc converters n switched-mode power supplies n v ds 100 v n i d 34.3 a n p tot 62.5 w n r dson 23 m w table 1: discrete pinning pin description simpli?ed outline symbol 1,2,3 source (s) sot669 (lfpak) 4 gate (g) mb mounting base; connected to drain (d) 1 top view 23 mb 4 s d g mbb076
9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 2 of 12 philips semiconductors PH20100S n-channel trenchmos? standard level fet 3. ordering information 4. limiting values table 2: ordering information type number package name description version PH20100S lfpak plastic single-ended surface mounted package (philips version lfpak); 4 leads sot669 table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage (dc) 25 c t j 150 c - 100 v v gs gate-source voltage (dc) - 20 v i d drain current (dc) t mb =25 c; v gs =10v; figure 2 and 3 - 34.3 a t mb = 100 c; v gs =10v; figure 2 - 21.6 a i dm peak drain current t mb =25 c; pulsed; t p 10 m s; figure 3 - 137 a p tot total power dissipation t mb =25 c - 62.5 w t stg storage temperature - 55 +150 c t j junction temperature - 55 +150 c source-drain diode i s source (diode forward) current (dc) t mb =25 c - 52 a i sm peak source (diode forward) current t mb =25 c; pulsed; t p 10 m s - 137 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy unclamped inductive load; i d =12a; t p = 0.3 ms; v dd 100 v; v gs =10v; starting at t j =25 c - 250 mj
9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 3 of 12 philips semiconductors PH20100S n-channel trenchmos? standard level fet fig 1. normalized total power dissipation as a function of mounting base temperature. fig 2. normalized continuous drain current as a function of mounting base temperature. t mb =25 c; i dm is single pulse; v gs =10v fig 3. safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03aa15 0 40 80 120 0 50 100 150 200 t mb p der (%) ( c) 03aa23 0 40 80 120 0 50 100 150 200 (%) i der t mb ( c) p der p tot p tot 25 c () ----------------------- 100 % = i der i d i d25c () ------------------- 100 % = 003aaa406 10 -1 1 10 10 2 10 3 1 10 10 2 10 3 v ds (v) i d (a) dc 100 ms 10 ms limit r dson = v ds / i d 1 ms t p = 10 m s 100 m s
9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 4 of 12 philips semiconductors PH20100S n-channel trenchmos? standard level fet 5. thermal characteristics 5.1 transient thermal impedance table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base figure 4 --2k/w fig 4. transient thermal impedance from junction to mounting base as a function of pulse duration. 003aaa407 10 -2 10 -1 1 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) single pulse 0.2 0.1 0.05 d = 0.5 0.02 t p t p t t p t d =
9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 5 of 12 philips semiconductors PH20100S n-channel trenchmos? standard level fet 6. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 1 ma; v gs =0v 100 - - v v gs(th) gate-source threshold voltage i d = 1 ma; v ds =v gs ; figure 9 t j =25 c 234v t j = 150 c 1.2 - - v i dss drain-source leakage current v ds = 100 v; v gs =0v t j =25 c - 0.06 1 m a t j = 150 c - - 500 m a i gss gate-source leakage current v gs = 20 v; v ds = 0 v - 2 100 na r dson drain-source on-state resistance v gs = 10 v; i d =10a; figure 7 and 8 t j =25 c - 19 23 m w t j = 150 c - 43 53 m w dynamic characteristics q g(tot) total gate charge i d = 20 a; v dd =50v; v gs =10v; figure 13 -39-nc q gs gate-source charge - 6.9 - nc q gd gate-drain (miller) charge - 8.9 - nc c iss input capacitance v gs =0v; v ds = 25 v; f = 1 mhz; figure 11 -2264-pf c oss output capacitance - 290 - pf c rss reverse transfer capacitance - 111 - pf t d(on) turn-on delay time v dd =50v; i d = 10 a; v gs =10v; r g = 4.7 w -23-ns t r rise time -15-ns t d(off) turn-off delay time - 47 - ns t f fall time - 9.3 - ns source-drain diode v sd source-drain (diode forward) voltage i s = 10 a; v gs =0v; figure 12 - 0.8 1.2 v t rr reverse recovery time i s = 20 a; di s /dt = - 100 a/ m s; v gs = 0 v - 110 - ns
9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 6 of 12 philips semiconductors PH20100S n-channel trenchmos? standard level fet t j =25 ct j =25 c and 150 c; v ds > i d xr dson fig 5. output characteristics: drain current as a function of drain-source voltage; typical values. fig 6. transfer characteristics: drain current as a function of gate-source voltage; typical values. t j =25 c fig 7. drain-source on-state resistance as a function of drain current; typical values. fig 8. normalized drain-source on-state resistance factor as a function of junction temperature. 003aaa408 0 10 20 30 40 01234 v ds (v) i d (a) v gs = 5.5 v 4.5 v 5 v 4.8 v 5.2 v 6 v 10 v 003aaa409 0 10 20 30 40 23456 v gs (v) i d (a) t j = 150 c 25 c 003aaa410 10 20 30 40 50 60 0 10203040 i d (a) r dson (m w ) 5.2 v 7 v v gs = 5 v 5.5 v 10 v 6 v 03aa31 0 1 2 3 -60 0 60 120 180 t j ( c) a a r dson r dson 25 c () ---------------------------- - =
9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 7 of 12 philips semiconductors PH20100S n-channel trenchmos? standard level fet i d = 1 ma; v ds =v gs t j =25 c; v ds =5v fig 9. gate-source threshold voltage as a function of junction temperature. fig 10. sub-threshold drain current as a function of gate-source voltage. v gs = 0 v; f = 1 mhz fig 11. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03aa32 0 1 2 3 4 5 -60 0 60 120 180 t j ( c) v gs(th) (v) max min typ 03aa35 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0246 v gs (v) i d (a) max typ min 003aaa411 10 2 10 3 10 4 10 -1 1 10 10 2 v ds (v) c (pf) c iss c oss c rss
9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 8 of 12 philips semiconductors PH20100S n-channel trenchmos? standard level fet t j =25 c and 150 c; v gs =0v i d = 20 a; v dd =50v fig 12. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. fig 13. gate-source voltage as a function of gate charge; typical values. 003aaa412 0 10 20 30 40 0.2 0.4 0.6 0.8 1 v sd (v) i s (a) t j = 25 c 150 c 003aaa413 0 2 4 6 8 10 0 10203040 q g (nc) v gs (v)
9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 9 of 12 philips semiconductors PH20100S n-channel trenchmos? standard level fet 7. package outline fig 14. sot669 (lfpak). references outline version european projection issue date iec jedec jeita sot669 mo-235 03-02-05 03-09-15 0 2.5 5 mm scale e e 1 b c 2 a 2 a 2 bc a e unit dimensions (mm are the original dimensions) mm 1.10 0.95 a 3 a 1 0.15 0.00 1.20 1.01 0.50 0.35 b 2 4.41 3.62 b 3 2.2 2.0 b 4 0.9 0.7 0.25 0.19 c 2 0.30 0.24 4.10 3.80 6.2 5.8 h 1.3 0.8 l 2 0.85 0.40 l 1.3 0.8 l 1 8 0 wy d (1) 5.0 4.8 e (1) 3.3 3.1 e 1 (1) d 1 (1) max 0.25 4.20 1.27 0.25 0.1 1 234 mounting base d 1 c plastic single-ended surface mounted package (philips version lfpak); 4 leads sot669 e b 2 b 3 b 4 h d l 2 l 1 a a w m c c x 1/2 e yc q q (a ) 3 l a a 1 detail x note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included.
9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 10 of 12 philips semiconductors PH20100S n-channel trenchmos? standard level fet 8. revision history table 6: revision history document id release date data sheet status change notice document number supersedes PH20100S_2 20040817 product data sheet - 9397 750 13698 PH20100S_1 modi?cations: ? i d max values updated in section 1.4 quic k ref erence data and section 4 limiting v alues ? r dson typ and max values updated in section 1.4 quic k ref erence data and section 6 char acter istics ? figure 3 and figure 7 updated ? data sheet updated to latest standards. PH20100S_1 20040305 preliminary data sheet - 9397 750 12815 -
philips semiconductors PH20100S n-channel trenchmos? standard level fet 9397 750 13698 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 02 17 august 2004 11 of 12 9. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 11. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 12. trademarks trenchmos is a trademark of koninklijke philips electronics n.v. 13. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 17 august 2004 document order number: 9397 750 13698 published in the netherlands philips semiconductors PH20100S n-channel trenchmos? standard level fet 14. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 5.1 transient thermal impedance . . . . . . . . . . . . . . 4 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 9 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 10 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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